| Safu ya Wavelength | : | 190-1100nm |
| Spectral Bandwidth | : | 2nm (5nm, 4nm, 1nm, 0,5nm hiari) |
| Usahihi wa Wavelength | : | ±0.3nm |
| Uzalishaji wa Wavelength | : | ≤0.15nm |
| Mfumo wa Photometric | : | Boriti mara mbili, skana otomatiki, vigunduzi viwili |
| Usahihi wa Picha | : | ±0.3τ (0~100τ) ± 0.002A (0~0.5A) ±0.004A (0.5~1A) |
| Uzalishaji wa Pichametric | : | ≤0.15% τ |
| Hali ya Kufanya kazi | : | T, A, C, E |
| Msururu wa Picha | : | -0.3-3.5A |
| Nuru Potelea mbali | : | ≤0.05%τ (Nal, 220nm, NaNO2 360nm) |
| Baseline Flatness | : | ±0.002A |
| Utulivu | : | ≤0.001A/h (katika 500nm, baada ya kupata joto) |
| Kelele | : | ±0.001A (katika 500nm, baada ya kupata joto) |
| Onyesho | : | LCD ya samawati yenye mwanga wa juu inchi 6 |
| Kichunguzi | : | Picha-diode ya silicon |
| Nguvu | : | AC 220V/50Hz, 110V/60Hz 180W |
| Vipimo | : | 630×470×210mm |
| Uzito | : | 26kg |
| Safu ya Wavelength | : | 190-1100nm |
| Spectral Bandwidth | : | 2nm (5nm, 4nm, 1nm, 0,5nm hiari) |
| Usahihi wa Wavelength | : | ±0.3nm |
| Uzalishaji wa Wavelength | : | 0.15nm |
| Mfumo wa Photometric | : | Ufuatiliaji wa uwiano wa mgawanyiko, skanning otomatiki, vigunduzi viwili |
| Usahihi wa Picha | : | ±0.3τ (0~100τ) ± 0.002A (0~0.5A) ±0.004A (0.5~1A) |
| Uzalishaji wa Pichametric | : | 0.2% τ |
| Hali ya Kufanya kazi | : | T, A, C, E |
| Msururu wa Picha | : | -0.3-3A |
| Nuru Potelea mbali | : | ≤0.05%τ (Nal, 220nm, NaNO2 360nm) |
| Baseline Flatness | : | ±0.002A |
| Utulivu | : | ≤0.001A/30min (katika 500nm, baada ya kupata joto) |
| Kelele | : | ±0.001A (katika 500nm, baada ya kupata joto) |
| Onyesho | : | LCD ya samawati yenye mwanga wa juu inchi 6 |
| Kichunguzi | : | Picha-diode ya silicon |
| Nguvu | : | AC 220V/50Hz, 110V/60Hz 180W |
| Vipimo | : | 630×470×210mm |
| Uzito | : | 26kg |
| Safu ya Wavelength | : | 190-1100nm |
| Spectral Bandwidth | : | 2nm (5nm, 1nm, hiari) |
| Usahihi wa Wavelength | : | ±0.3nm |
| Uzalishaji wa Wavelength | : | 0.2nm |
| Mfumo wa Photometric | : | Boriti moja, wavu wa ndege wa 1200L/mm |
| Usahihi wa Picha | : | ±0.3τ (0~100τ) ± 0.002A (0~0.5A) ±0.004A (0.5~1A) |
| Uzalishaji wa Pichametric | : | ≤0.15% τ |
| Hali ya Kufanya kazi | : | T, A(-0.3-3A), C, E |
| Msururu wa Picha | : | -0.3-3A |
| Nuru Potelea mbali | : | ≤0.05%τ (Nal, 220nm, NaNO2 360nm) |
| Baseline Flatness | : | ±0.002A |
| Utulivu | : | ≤0.001A/30min (katika 500nm, baada ya kupata joto) |
| Kelele | : | ±0.001A (katika 500nm, baada ya kupata joto) |
| Onyesho | : | LCD ya samawati yenye mwanga wa juu inchi 6 |
| Kichunguzi | : | Picha-diode ya silicon |
| Nguvu | : | AC 220V/50Hz, 110V/60Hz 140W |
| Vipimo | : | 530×410×210mm |
| Uzito | : | 18kg |
| Safu ya Wavelength | : | 320-1100nm |
| Spectral Bandwidth | : | 2nm (5nm, 1nm, hiari) |
| Usahihi wa Wavelength | : | ±0.5nm |
| Uzalishaji wa Wavelength | : | 0.2nm |
| Mfumo wa Photometric | : | Boriti moja, wavu wa ndege wa 1200L/mm |
| Usahihi wa Picha | : | ±0.3τ (0~100τ) ± 0.002A (0~0.5A) ±0.004A (0.5~1A) |
| Uzalishaji wa Pichametric | : | ≤0.15% τ |
| Hali ya Kufanya kazi | : | T, A, C, E |
| Msururu wa Picha | : | -0.3-3A |
| Nuru Potelea mbali | : | ≤0.05%τ (Nal, 220nm, NaNO2 360nm) |
| Baseline Flatness | : | ±0.002A |
| Utulivu | : | ≤0.001A/30min (katika 500nm, baada ya kupata joto) |
| Chanzo cha Nuru | : | Taa ya halogen ya Tungsten |
| Onyesho | : | LCD ya samawati yenye mwanga wa juu inchi 6 |
| Kichunguzi | : | Picha-diode ya silicon |
| Nguvu | : | AC 220V/50Hz, 110V/60Hz 140W |
| Vipimo | : | 530×410×210mm |
| Uzito | : | 18kg |